Radiofrequency performance of hydrogenated diamond MOSFETs with alumina
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-02-11 |
| Journal | Applied Physics Letters |
| Authors | Chongwu Zhou, J. J. Wang, Jianchao Guo, Cui Yu, Ze He |
| Institutions | Hebei Semiconductor Research Institute |
| Citations | 32 |
Abstract
Section titled āAbstractāHydrogenated diamond MOSFETs with self-oxidized alumina as a gate dielectric are fabricated. The diamond MOSFETs show a high maximum drain current density of 466 mA/mm at VGS = ā6 V, a transconductance of 58 mS/mm, and an off-state breakdown voltage of ā53 V. The maximum output power density reaches 745 mW/mm at 2 GHz continuous wave, which is the highest reported value for diamond transistors measured at 2 GHz. The output power value measured is lower than that estimated. Pulse I-V analysis shows that the main factor that affects the output power of the diamond MOSFETs is the traps in the channel.