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6CCVD Research

High-Temperature Annealing of Sputter-Deposited AlN on Diamond Substrate

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2019-05-01
AuthorsTatsuya Shirato, Yusuke Hayashi, Kenjiro Uesugi, Kanako Shojiki, Hideto Miyake
InstitutionsTsu City College, Mie University

Abstract

Section titled ā€œAbstractā€

Diamond is an attractive widegap semiconductor for power devices due to the bandgap of 5.5 eV and high hole conductivity. Quantum sensing by nitrogen-vacancy (NV) centers has also been focused on in recent years. On the other hand, (Al, Ga)N has been extensively studied for deep ultraviolet LEDs and high electron mobility transistors, whereas the poor p-type conductance limits the performance of bipolar devices. Hence, the heterogeneous integration of diamond and (Al, Ga)N is expected to realize efficient carrier injection into widegap bipolar devices.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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