A GaN/Diamond HEMTs with 23 W/mm for Next Generation High Power RF Application
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-06-01 |
| Authors | Won Sang Lee, Kyungwon Lee, Seung Hyun Lee, Kevin Cho, Samuel K. Cho |
| Citations | 13 |
Abstract
Section titled āAbstractāThis work demonstrated a successful fabrication of 4ā GaN/Diamond HEMTs incorporated with Inner Slot Via Hole process. The RF device parameters were measured On-wafer Load pull measurement. The power density of 23.2 W/mm at Vds = 100 V is obtained at a wafer level at 2 GHz pulse power measurements.