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6CCVD Research

Design of Diamond Power Devices - Application to Schottky Barrier Diodes

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2019-06-21
JournalEnergies
AuthorsNicolas Rouger, Aurélien Maréchal
InstitutionsCentre National de la Recherche Scientifique, Laboratoire Plasma et Conversion d’Energie
Citations29

Abstract

Section titled “Abstract”

Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 1991 - Capacitance-voltage measurements on metal-SiO2-diamond structures fabricated with (100)- and (111)-oriented substrates [Crossref]
  2. 1989 - Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film [Crossref]
  3. 1988 - Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films [Crossref]
  4. 2010 - Extreme dielectric strength in boron doped homoepitaxial diamond [Crossref]
  5. 2014 - Zr/oxidized diamond interface for high power Schottky diodes [Crossref]
  6. 2009 - Diamond Schottky-pn diode with high forward current density and fast switching operation [Crossref]
  7. 2017 - Dynamic properties of diamond high voltage p-i-n diodes [Crossref]
  8. 2014 - Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications [Crossref]
  9. 2017 - Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique [Crossref]
  10. 2012 - High temperature application of diamond power device [Crossref]

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