Characterization and mobility analysis of MoO3-gated diamond MOSFET
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-09-01 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Jinfeng Zhang, Zeyang Ren, Jincheng Zhang, Chun-fu Zhang, Da-zheng Chen |
| Institutions | Xidian University |
| Citations | 16 |
Abstract
Section titled āAbstractāA MoO3-gated diamond metal-oxide-semiconductor field effect transistor (MOSFET) with a gate length of 40 Āµm was characterized. Analysis of the flat band voltage shift from the capacitance-voltage hysteresis shows quite high density of the fixed charge presents in the MoO3 layer (1.67 Ć 1012 cmā2), but the density of the traps brought by MoO3 layer is fairly low (1.35 Ć 1011 cmā2). The gate voltage dependence of the effective hole mobility was extracted and fitted by the empirical relation widely used in the silicon MOS channel. The resulting low-field mobility without vertical field degradation and the mobility degradation factor are 699 cm2/(VĀ·s) and 1.13, respectively.