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6CCVD Research

EV/HEV Industry Trends of Wide-bandgap Power Semiconductor Devices for Power Electronics Converters

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2019-06-01
AuthorsAmin Ghazanfari, Christian Perreault, Karim Zaghib
InstitutionsHydro-Québec
Citations13

Abstract

Section titled “Abstract”

During the past two decades, medium-power inverters for electric and hybrid electric vehicles (EV/HEV) have been dominated by mature silicon (Si) insulated-gate bipolar transistor (IGBT) technology. New power semiconductor technologies, such as silicon carbide (SiC), have attracted increasing interest as attractive alternatives that address the limitations of the band-gap width, breakdown voltage, saturation drift rate, and thermal conductivity of Si devices. This paper provides an overview of wide-bandgap power semiconductors from the perspectives of the efficiency, reliability, added cost, and market, particularly for EV and charging infrastructure applications. In addition, the potential of wide-bandgap power devices is analyzed, including SiC, gallium nitride (GaN), and synthetic diamond, and the industry vision and evolution related to SiC penetration into the automotive supply chain are described.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 0 - The World’s First Low On-Resistance High-Speed SiC Transistor
  2. 0 - SiC And GaN Electronics: Where, When And How Big?

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