Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-μm Waveband
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-06-13 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Authors | A. Mereuta, Kostiantyn Nechay, A. Caliman, G. Suruceanu, A. Rudra |
| Institutions | Tampere University, École Polytechnique Fédérale de Lausanne |
| Citations | 6 |
Abstract
Section titled “Abstract”Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors fixed on a diamond heat-sink substrate in a flip-chip geometry, incorporated in a V-cavity configuration. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11 degrees C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. This demonstration represents more than five-fold increase of the output power compared to the state-of-the-art flip-chip VECSELs previously reported at the 1.55 mu m wavelength range. It opens new perspectives for developing practical VECSEL-based laser systems operating at a wavelength range widely used in many applications.