Performance Improved Vertical Diamond Schottky Barrier Diode With Fluorination-Termination Structure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-06-14 |
| Journal | IEEE Electron Device Letters |
| Authors | Dan Zhao, Zhangcheng Liu, Juan Wang, Wenyang Yi, Ruozheng Wang |
| Institutions | Taiyuan University of Science and Technology, Xiāan Jiaotong University |
| Citations | 13 |
Abstract
Section titled āAbstractāWe have demonstrated performance improved vertical diamond Schottky barrier diodes (SBDs) with fluorination-terminated (FT) structure. A turn-on voltage of 1.6 V, an on-resistance of 50.2 mĪ©Ā·cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> , a breakdown voltage of 117 V, and a breakdown field of 3.3 MV/cm are achieved for the SBD with an FT length of 20 Ī¼m. We verified that the SBD with FT structure could obtain lower turn-on voltage and larger breakdown field compared to that of the SBD without FT structure. The results show that the SBDs with FT structure have significant potential for future high-performance power electronics application.