Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-10-09 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Takashi Matsumae, Yuichi Kurashima, Hitoshi Umezawa, Hideki Takagi |
| Institutions | National Institute of Advanced Industrial Science and Technology |
| Citations | 22 |
Abstract
Section titled āAbstractāThis study addresses a mechanism by which a diamond surface cleaned with a H2SO4/H2O2 mixture forms a direct bonding with an oxygen-plasma-activated SiO2 surface. Surface characterizations revealed that the cleaning with the H2SO4/H2O2 mixture at 75 Ā°C effectively OH-terminated the diamond (111) surface without a significant increase in the surface roughness. The OH-terminated diamond and SiO2/Si substrates formed a C-O-Si bond by thermal dehydration reaction at 200 Ā°C without significant loss in diamond crystallinity. It is expected that the bonding technique using H2SO4/H2O2 can contribute to the integration between diamond and semiconductor substrates because the high-crystallinity diamond substrate can be directly bonded through the commonly used cleaning processes.