Suppression of killer defects in diamond vertical-type Schottky barrier diodes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-12-26 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Atsushi Kobayashi, Shinya Ohmagari, Hitoshi Umezawa, Daisuke Takeuchi, Takeyasu Saito |
| Institutions | Osaka Prefecture University, National Institute of Advanced Industrial Science and Technology |
| Citations | 12 |
Abstract
Section titled āAbstractāVertical architectures in diamond Schottky barrier diodes (VSBDs) are favorable for realizing high-current operation. However, a major obstacle affecting performance is the presence of killer defects which are thought to originate from heavily B-doped p+ substrates. Here, we introduced a buffer layer to suppress the extended defects from p+ substrate to epitaxial layer, called metal-assisted termination. Significant reduction of band-A luminescence in cathodoluminescence spectra was confirmed, indicating a large improvement in crystallinity. VSBDs showed highly uniform rectifying actions with suppressed leakage currents. The electric field strength was increased from 1.9 to 5.0 MV cmā1 when a buffer layer was inserted.