Performance of Sapphire and Diamond based HEMT for RF Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-02-01 |
| Authors | Shweta, Narendra Yadava, R. K. Chauhan |
| Institutions | Deen Dayal Upadhyaya Gorakhpur University, Madan Mohan Malaviya University of Technology |
Abstract
Section titled āAbstractāThis paper demonstrates the performance comparison of Sapphire (Al <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sub> O <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>3</sub> ) and Diamond substrate based High Electron Mobility Transistor (HEMT). The parameters used in the performance comparison includes: transfer characteristics, output characteristics and transconductance. High drain current of Sapphire makes availability for Radio Frequency (RF) application up to millimetre waves (30GHz-300GHz) and also high thermal conductivity of Diamond (2000W/ m.K) make withstand with high temperature. Transconductance of Diamond is (-350Ī¼S) and of sapphire is (-375Ī¼S) as compare to Gallium arsenide (-300Ī¼S). A study of various parameters like breakdown voltage and sub threshold slope also has been done. All these simulation work is performed using Silvaco ATLAS 2D simulator.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2019 - AIN/beta-Ga2O3 based HEMT: A Potential pathway to ultimate high power device
- 2012 - RF high power operation of AlGaN/GaN HEMTs epitaxial Grown on Diamond