Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-01 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Yoichi Kamada, Shiro Ozaki, Junya Yaita, Atsushi Yamada, Toshihiro Ohki |
| Institutions | Fujitsu (Japan) |
| Citations | 6 |
Abstract
Section titled āAbstractāWe investigated a thermally stable and low trap density insulator for AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs). Current-voltage and capacitance-voltage measurements were performed before and after post deposition annealing (PDA) at 700 Ā°C. A large increase in leakage current and high interface state density were observed after the PDA in the MIS structure with AlOx. The interface state density was reduced to one-third in the MIS structure with AlON, probably due to the reduced carbon impurity density at the AlOx/GaN HEMT interfaces. Meanwhile, the MIS structure with SiNx maintained high breakdown voltages of over 200 V, even after the PDA. By employing SiNx/AlON layers, we demonstrated low interface state density of 2.3 Ć 1013 cmā2 eVā1 at Ec ā 0.31 eV and suppressed leakage current at ā200 V. We believe that the thermally-stable bi-layer structure is a promising technology for diamond deposition to improve heat dissipation.