Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-07-01 |
| Authors | Al Kabli Reem, A Eldeeb Mohammed, Quang Ngį»c Nguyį» n, Hiroshi Kawarada |
| Institutions | Waseda University |
| Citations | 4 |
Abstract
Section titled āAbstractāThanks to the unique properties, nanocrystalline-diamond is a valuable material that is widely used in nano-electronic device fabrication to enable the new promising power device applications in the near future. In general, the hydrogenated-(C-H) nano-diamond metal oxide semiconductor (MOSFET) depicts the normally- on status (depletion mode). In this paper, to confirm normally-on operation and show the characterization of normally-off operations with a controlled gate of the power device and study the corresponding impact, we simulate the two-dimensional (2D) C-H nano-diamond MOSFET under several surface charge modelsā impact. The enhancement mode, called normally-off, is attained to realize a safety point of the power device. The results also show the shifting tendency of the threshold voltage to a negative value with a positive charge model, given that, in principle, this state is impractical without a donor doping or oxidation layer.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2002 - The fermi level in diamond [Crossref]
- 2016 - Hydrogen-terminated diamond vertical-type metal oxide semiconductor field effect transistors with a trench gate [Crossref]