Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-07-28 |
| Journal | Materials science forum |
| Authors | Takashi Matsumae |
| Citations | 1 |
Abstract
Section titled âAbstractâA monocrystalline diamond substrate was bonded with a Si substrate employing a direct bonding technique. The diamond and Si surfaces were functionalized with hydroxyl (-OH) groups and subsequently bonded by the thermal dehydration reaction across the bonding interface. When a diamond (111) surface was treated with a mixture of H 2 SO 4 and H 2 O 2 , it generated an atomic bond of C-O-Si with an oxygen-plasma-irradiated Si substrate. The bonding technique of diamond using the H 2 SO 4 /H 2 O 2 mixture is expected to contribute to the future integration of diamond and semiconductor substrates because it allows low-temperature bonding in atmospheric air with negligible crystallinity damage.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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