Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-09-25 |
| Journal | Semiconductor Science and Technology |
| Authors | Yuewei Zhang, James S. Speck |
| Institutions | University of California, Santa Barbara |
| Citations | 35 |
Abstract
Section titled āAbstractāAbstract Ultra-wide bandgap (UWBG) semiconductors are attracting increasing research interest for power device applications. While promising results have been reported for various materials, it remains unclear which material and technology will succeed. Many figure of merits (FOMs) were derived for power device applications to guide material choices, including the widely used Baligaās FOM (BFOM) to describe the resistive loss of power devices, and Baligaās high-frequency FOM (BHFFOM) to further consider the switching loss. However, key underlying assumptions for those widely cited FOMs, including the assumption of shallow hydrogenic dopants, tend to fail for UWBG semiconductors. In this work, we revisit several important FOMs in describing vertical power electronics to properly account for both incomplete ionization and background compensation effects. We suggest that it is necessary to include the dopant ionization term (for example n/N d in an n-drift layer) for both BFOM and BHFFOM to fully capture the potential of the UWBG semiconductors for power device applications. Incomplete dopant ionization in materials like diamond and AlN substantially lowers their FOMs for power switching, leading to high conductive and switching losses. Due to the availability of shallow donors, low background impurity compensation, and bulk substrates, Ī²-Ga 2 O 3 promises the best performance among the investigated materials. The modified FOMs offer a valuable guidance in material choices for power device applications.