| Metadata | Details |
|---|
| Publication Date | 2020-09-22 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Patrick Fay, Yu Cao, Josephine Chang, Jae-Kyeong Jeong, Matteo Meneghini |
| Institutions | Hanyang University, University of Notre Dame |
| Citations | 2 |
| Analysis | Full AI Review Included |
- Core Focus: This Guest Editorial introduces a Special Issue dedicated to the state-of-the-art in Ultra Wide Band Gap (UWBG) semiconductors for high-performance power control and conversion.
- Material Advancement: The field is experiencing rapid growth, driven by fundamental material-level work in UWBG materials such as Ga2O3, diamond, and Al(Ga)N, which are beginning to yield promising device results.
- Established Platforms: Performance and understanding of devices based on established wide bandgap materials, SiC and GaN, continue to improve significantly.
- Critical Research Areas: Key challenges being addressed include understanding the role of intrinsic/extrinsic defects, developing optimal surface passivation, identifying suitable high-field dielectric materials, and improving thermal management.
- Design Innovation: The issue highlights papers covering novel device architectures and material/device design innovations aimed at maximizing electrical performance and reliability.
- Application Scope: The technology targets high-impact applications including automotive systems, data center power management, grid control, and industrial traction control.
| Parameter | Value | Unit | Context |
|---|
| Primary Focus | Power Control and Conversion | N/A | Application area for UWBG semiconductors |
| UWBG Materials Highlighted | Ga2O3, Diamond, Al(Ga)N | N/A | Materials promising fundamental advantages |
| WBG Materials Covered | SiC, GaN, AlN, AlGaN | N/A | Materials with ongoing performance improvement and modeling |
| Electrical Requirement | High Electric Fields | N/A | Supported by UWBG materials; requires specialized dielectrics |
| Research Scope | Material-level understanding, Device demonstrations, Modeling | N/A | Coverage spanning theoretical and experimental developments |
| Performance Goal | Best Possible Electrical Performance | N/A | Achieved through novel device architectures |
- Defect Analysis: Investigating the precise role of intrinsic and extrinsic defects within UWBG materials on overall device performance and reliability.
- Device Design Optimization: Developing optimal strategies for device design and fabrication processes to maximize yield and performance.
- Surface Passivation and Dielectrics: Researching effective surface passivation techniques and identifying dielectric materials suitable for operation under the high electric fields supported by UWBG materials.
- Thermal Management: Establishing appropriate and effective approaches for thermal management to ensure device longevity and performance in high-power density applications.
- Novel Architectures: Creating novel device structures and concepts specifically designed to maximize the performance of devices and circuits for power applications.
- Integration Studies: Assessing the potential and challenges associated with integrating UWBG devices with other semiconductors for comprehensive system implementation.
- Material Understanding: Advancing the fundamental material-level understanding of key power materials, including Ga2O3, AlN, GaN, AlGaN, and diamond, through both experimental and theoretical means.
- Automotive: High-efficiency power electronics for electric vehicles and charging infrastructure.
- Data Center Power Management: Improving the efficiency and density of power conversion systems in large-scale computing facilities.
- Grid Control: Applications in high-voltage power transmission, distribution, and smart grid infrastructure.
- Industrial Control: General industrial power supplies, motor drives, and high-power switching systems.
- Locomotive Traction Control: High-reliability, high-power electronics for heavy rail and traction systems.
View Original Abstract
On behalf of myself and my fellow Guest Editors for the Special Issue on Ultra Wide Band Gap Semiconductors for Power Control and Conversion appearing in this monthâs issue of the IEEE Transactions on Electron Devices, we are gratified to be able to present readers with a selection of papers spanning the current state of the art in wide and ultrawidebandgap semiconductor devices. Electronics for power control and conversion is presently going through a renaissance, with new device concepts, extensions of known concepts to new materials, and new applications all merging simultaneously. Fundamental material-level work in Ga2O3, diamond, Al(Ga)N, and other ultrawidebandgap materials have begun to produce device results commensurate with the fundamental advantages that these materials promise for power control and conversion applications. At the same time, the understanding and performance of devices based on SiC and GaN continue to improve. Applications of these new materials and devices include automotive, data center power management, grid control, industrial and locomotive traction control, and others. Despite the tremendous progress in this area, however, much remains to be understood. The role of intrinsic and extrinsic defects in these materials on device performance, optimal strategies for device design and fabrication, surface passivation, and dielectric materials suitable for the high electric fields supported by these materials, device structures, and concepts for achieving the best possible electrical performance, appropriate approaches to thermal management, and the potential and challenges of integration of these devices with other semiconductors for system implementation are all areas in which rapid progress is being made.