Modeling, design, and simulation of Schottky diodes based on ultrananocrystalline diamond composite films
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-10-19 |
| Journal | Semiconductor Science and Technology |
| Authors | Mahmoud Shaban |
| Citations | 2 |
Abstract
Section titled āAbstractāAbstract In this study, heterojunction diodes based on ultrananocrystalline diamond/hydrogenated amorphous carbon (UNCD/a-C:H) composite films, grown on Si substrates using the coaxial arc plasma deposition method, were modeled, characterized, and investigated. Calibrated material parameters, extracted from experimental analysis of nitrogen-doped (n-type) UNCD/a-C:H/p-type Si heterojunctions, were fed to the device model. Design of vertical geometry Pd/n-type UNCD/a-C:H Schottky diodes was proposed using a two-dimensional device simulator. Simulation results of diodes with field-plate termination exhibited a barrier height of 1 eV, turn-on voltage of 0.75 V, specific on-resistance ( R s,on ) of 70 mĪ© cm 2 , and breakdown voltage ( V BD ) of 270 V. This corresponds to the power figure of merit ( V BD 2 / R s,on ) of 1.04 MW cm ā2 . The results offer a promising potential of using nitrogen-doped UNCD/a-C:H in power electronics devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2020 - Suppression of killer defects in diamond vertical-type Schottky barrier diodes [Crossref]
- 2005 - Diamond semiconductor technology for RF device applications [Crossref]
- 2000 - Optical, thermal and mechanical properties of CVD diamond [Crossref]
- 2019 - Reverse breakdown in large area, field-plated, vertical Ī²-Ga2O3 rectifiers [Crossref]
- 2016 - Single crystal diamond wafers for high power electronics [Crossref]
- 2015 - Power high-voltage and fast response Schottky barrier diamond diodes [Crossref]
- 2002 - Morphology and electronic structure in nitrogen-doped ultrananocrystalline diamond [Crossref]
- 2017 - Diamond MIP structure Schottky diode with different drift layer thickness [Crossref]
- 2019 - Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage [Crossref]
- 2020 - Energy conversion efficiency in betavoltaic cells based on the diamond Schottky diode with a thin drift layer [Crossref]