Preface
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-10-11 |
| Authors | |
| Analysis | Full AI Review Included |
Executive Summary
Section titled âExecutive Summaryâ- Conference Scope: The 13th ASDAM (Advanced Semiconductor Devices and Microsystems) Conference proceedings cover research on new materials, advanced technological processes, characterization methods, and modeling/simulation for semiconductor devices.
- Cancellation Context: The conference, originally planned for Smolenice Castle, Slovakia, was cancelled due to the global COVID-19 pandemic, but the proceedings were published.
- Key Device Focus: Significant attention is given to GaN High Electron Mobility Transistors (HEMTs) for high-frequency switching and logic applications, including reliability considerations.
- Emerging Materials: The proceedings highlight the perspectives of lateral and vertical gallium oxide (Ga2O3) transistors, diamond devices, and graphene quantum dots.
- Specialized Topics: Research areas include THz photonics and interband cascade lasers.
- Industry Relevance: The scope includes smart systems, IoT (Internet of Things) integration, and power devices, supported by collaborations with ECSEL (Electronic Components and Systems for European Leadership) projects.
Technical Specifications
Section titled âTechnical SpecificationsâNote: This document is a conference preface and does not contain specific quantitative experimental data (voltages, efficiencies, temperatures). The table below summarizes the technical focus areas mentioned in the scope.
| Parameter (Research Area) | Value (Focus) | Unit | Context |
|---|---|---|---|
| Device Material | Wide Bandgap Semiconductors | N/A | GaN HEMTs |
| Device Material | Ultra-Wide Bandgap Semiconductors | N/A | Diamond devices |
| Device Material | Emerging Oxide Semiconductors | N/A | Gallium oxide (Ga2O3) transistors |
| Device Architecture | Lateral and Vertical | N/A | Ga2O3 transistor structures |
| Optical Devices | THz Photonics | N/A | Advanced communication and sensing |
| Laser Technology | Interband Cascade Lasers | N/A | Specialized light sources |
| System Integration | Wide implementation | N/A | IoT, sensors, and smart systems |
| Publication Volume | Almost 30 contributing papers | N/A | Published in Conference Proceedings |
Key Methodologies
Section titled âKey MethodologiesâNote: As a preface, this document outlines the types of methodologies covered by the conference, rather than specific experimental recipes or parameters (e.g., growth temperature, pressure, gas flow).
- Advanced Technological Processes: Focus on the fabrication and processing techniques required to realize new semiconductor materials and device structures.
- Characterization Methods: Techniques used to analyze and interpret the electrical, optical, and structural characteristics obtained from fabricated devices.
- Modeling and Simulation: Computational approaches utilized to predict device behavior, optimize structures, and aid in the interpretation of experimental results.
- Reliability Studies: Specific methodologies applied to assess the long-term stability and performance of devices, particularly GaN HEMTs, under operational conditions.
- System-Level Integration: Methods for incorporating semiconductor devices (sensors, power devices) into smart systems and IoT applications.
Commercial Applications
Section titled âCommercial Applicationsâ| Device/Material Focus | Commercial Application Area | Related ECSEL Project Mentioned |
|---|---|---|
| GaN HEMTs | High-Frequency and High-Power Switching | 5G-GaN, Ultimate GaN |
| Gallium Oxide (Ga2O3) | Next-Generation Power Devices and Converters | Power to Power |
| Diamond Devices | Extreme Environment Electronics; High Thermal Management | N/A |
| THz Photonics | Advanced Communication, Spectroscopy, and Imaging | N/A |
| Sensors and IoT | Smart Systems, Industrial Monitoring, and Data Acquisition | N/A |
| Interband Cascade Lasers | Environmental Monitoring and Chemical Sensing | N/A |
| General Scope | Electronic Components and Systems for European Leadership | Reaction, Hiperform |
View Original Abstract
The 13th ASDAM (Advanced Semiconductor Devices and Microsystems) Conference suffers as the whole world from the global pandemic caused by the new coronavirus COVID-19.With regard to the safety of participants, the organizers decided to cancel the conference that was intended to be held at the Smolenice Castle in Slovakia.ASDAM is the conference organized biannually at Smolenice Castle, Slovakia by researchers from Slovak Academy of Sciences and Slovak University of Technology.The scope of the conference comprises new materials and structures, advanced technological processes, and characterization methods.Modeling and simulation help researchers to an interpretation of obtained characteristics, smart systems and their wide implementation e,g, in IoT, sensors and devices covered by conference topic.It has been already an established meeting of scientists prevalently from Central Europe but also from the United Kingdom, Japan and other countries of the world.The new results of the research endeavour in the field of semiconductor devices will be referred to in the Conference sessions.Invited lecturers intended to describe the state of the art in the special topics of the Conference mainly concentrating on THz photonics and interband cascade lasers, Reliability considerations for GaN HEMTs and their use for switching and logic applications, superior properties of diamond devices, graphene quantum dots and last but not least perspectives of lateral and vertical gallium oxide transistors.