Carrier Scattering Mechanisms - Identification via the Scaling Properties of the Boltzmann Transport Equation
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-11-01 |
| Journal | Advanced Theory and Simulations |
| Authors | Saman Majdi, Viktor Djurberg, Nattakarn Suntornwipat, Markus Gabrysch, Jan Isberg |
| Institutions | Uppsala University |
| Citations | 10 |
Abstract
Section titled âAbstractâAbstract A method based on the scaling properties of the Boltzmann transport equation is proposed to identify the dominant scattering mechanisms that affect charge transport in a semiconductor. This method uses drift velocity data of mobile charges at different lattice temperatures and applied electric fields and takes into account the effect of carrier heating. By performing timeâofâflight measurements on singleâcrystalline diamond, hole and electron drift velocities are measured under lowâinjection conditions within the temperature range 10-300 K. Evaluation of the data using the proposed method identifies acoustic phonon scattering as the dominant scattering mechanism across the measured temperature range. The exception is electrons at 100-200 K where conductionâband valley repopulation has a prominent effect. At temperatures below â80 K, where valley polarization is observed for electrons, transport dominated by acoustic phonon scattering is observed in different valleys separately. The scaling model is additionally tested on data from highly resistive gallium arsenide samples to demonstrate the versatility of the method. In this case, impurity scattering can be ruled out as the dominant scattering mechanism in the samples for the temperature range 80-120 K.