Degradation Mechanisms of Hydrogen-Terminated Diamond MISFETs Under Off-State Stress Conditions
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-12-08 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Zhihao Chen, Xinxin Yu, Shuman Mao, Jianjun Zhou, Yuechan Kong |
| Institutions | University of Electronic Science and Technology of China, Huzhou University |
| Citations | 1 |
Abstract
Section titled “Abstract”This article investigates the degradation mechanisms of hydrogen-terminated (C-H) diamond metal-insulator-semiconductor field-effect transistors (MISFETs) submitted to OFF-state stress. Both pulsed characterization and transient ON-resistance ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${R}{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ) measurements are used. For the pulsed characterization, <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${R}{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> increases with the increased intensity of the drain quiescent bias. However, the threshold voltage ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${V}{\text {TH}}$ </tex-math></inline-formula> ) increased (i.e., carrier concentration increase) with the increased intensity of the drain quiescent bias, which is different from the GaN-based devices that carrier concentration decreased with the increased intensity of the drain quiescent bias due to the trapping effects under the gate region. By means of various pulse periods (PPs) and gate quiescent biases, demonstrating that an increase in <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${V}{\text {TH}}$ </tex-math></inline-formula> is mainly due to the detrapping effects under the gate region, an increase in <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${R}{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> is primarily due to the trapping effects in the gate-drain access region. Based on the results of transient <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${R}{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> measurements, two kinds of traps with different activation energies (0.28 and 0.24 eV) are determined. These results are helpful to improve the performance of C-H diamond MISFETs.