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6CCVD Research

Improved theoretical minimum of the specific on-resistance of a superjunction

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2020-11-10
JournalSemiconductor Science and Technology
AuthorsK. Akshay, Shreepad Karmalkar
Citations9

Abstract

Section titled ā€œAbstractā€

Abstract We derive simple closed-form solutions for the optimum pillar parametersā€”length L opt , width 2 W opt and doping N opt of a superjunction. The parameters yield the minimum specific on-resistance, R ONSP , for a target breakdown voltage, V BR,target , thereby solving a long standing design problem. The minimum R ONSP occurs for zero charge imbalance. Our estimates of N opt are higher and hence the R ONSP lower than in prior works by >30%. We show that, N opt depends on W opt alone, since for this doping, the p and n pillars are just fully depleted when the reverse bias equals the V BR of the one-dimensional p + n junction. Further, our derivation reveals that L opt depends on V BR,target alone since the field distribution associated with V BR,target is approximately uniform over L opt . In contrast, prior design solutions require numerical or iterative calculations, and are either physically opaque or give a distorted insight that L opt depends on W opt and N opt on L opt . Moreover, our solutions have a generic form that permits quick calculations across different materials. They are validated by technology computer-aided design simulation for low and wide band gap materialsā€”Si and 4H-SiC. Their results for GaN and diamond are given to reveal the wide 100 V-30 kV application range of devices in these materials. The solutions are also used to reveal the scope for reducing the R ONSP of several fabricated devices reported in literature by process improvement.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1997 - Theory of semiconductor superjunction devices [Crossref]
  2. 1978 - New type of varactor diode consisting of multilayer p-n junctions [Crossref]
  3. 1998 - A new generation of high voltage MOSFETs breaks the limit line of silicon [Crossref]
  4. 2013 - Development of SiC super-junction (SJ) device by deep trench-filling epitaxial growth
  5. 2014 - First experimental demonstration of SiC superjunction (SJ) structure by multi-epitaxial growth method
  6. 2016 - Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode [Crossref]
  7. 2017 - Superjunction power devices history development and future prospects [Crossref]
  8. 2008 - Modeling and optimal device design for 4H-SiC super-junction devices [Crossref]
  9. 2001 - Optimal on-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model [Crossref]

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