The relationship between the doping concentration and d ferromagnetism in n-type 4H-SiC
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-11-19 |
| Journal | Journal of Applied Physics |
| Authors | Bo Peng, Jiajie Chen, Jichao Hu, Xingzhong Cao, Lei Yuan |
| Institutions | Xiāan University of Technology, Institute of High Energy Physics |
| Citations | 2 |
Abstract
Section titled āAbstractāTo date, research on defect-induced magnetism in SiC has been conducted to clarify the relationship between the ferromagnetic signal and the carrier concentration. It has been experimentally proven that there is an interaction between the d0 magnetic moment and the hole carrier in p-type 4H-SiC. However, for n-type SiC, the existing theoretical predictions are insufficient to explain the variation in magnetization with the doping concentration. To solve this problem, we prepared 4H-SiC epitaxial layers with different nitrogen doping concentrations and introduced defects by ion implantation. By measuring and analyzing the magnetic properties, we found that the ferromagnetic composition depends on both the implantation dose and the doping concentration. By performing first-principles calculations, we studied the magnetic moments and interactions of defects with different charge states, which is related to defect-induced ferromagnetism. These defects include not only the paramagnetic centers reported in previous studies, such as silicon vacancies and divacancies, but also the NCVSi complex defect of recent interest, which are indicated by positron annihilation experiments. Combining experimental observations with theoretical calculations, we explained the relationship between magnetic properties and the nitrogen doping concentration in the epitaxial samples. Our research will help us to better understand the physical mechanism of defect-induced magnetism in doped semiconductors and provide a potential platform for the control of defect-induced magnetism by carrier density modulation and the fabrication of SiC spintronic devices without transition metals.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2017 - Tabby graphene: Dimensional magnetic crossover in fluorinated graphite [Crossref]
- 2015 - Edge state magnetism in zigzag-interfaced graphene via spin susceptibility measurements [Crossref]
- 2003 - Induced magnetic ordering by proton irradiation in graphite [Crossref]
- 2004 - Unconventional magnetism in all-carbon nanofoam [Crossref]
- 2009 - Room-temperature ferromagnetism in graphite driven by two-dimensional networks of point defects [Crossref]
- 2017 - Room temperature organic magnets derived from sp3 functionalized graphene [Crossref]
- 2009 - The origin of oxygen vacancy induced ferromagnetism in undoped TiO2 [Crossref]
- 2010 - Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO [Crossref]
- 2017 - First-principles study of Ga-vacancy induced magnetism in Ī²-Ga2O3 [Crossref]
- 2018 - Room-temperature d0 ferromagnetism in carbon-doped Y2O3 for spintronic applications: A density functional theory study [Crossref]