Charge-State Tuning of Single SnV Centers in Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-12-03 |
| Journal | ACS Photonics |
| Authors | Tobias LĆ¼hmann, Johannes KĆ¼pper, Stefan Dietel, Robert Staacke, Jan Meijer |
| Institutions | Leipzig University |
| Citations | 22 |
Abstract
Section titled āAbstractāTin-vacancy (SnV) and other group-IV vacancy centers in diamond (SiV, GeV, and PbV) are intensively studied as promising alternatives to the nitrogen-vacancy (NV) center for quantum-based applications. The knowledge and the control of their charge state are therefore major issues. Here, using p-i-p planar junctions, we explore the charge states of implanted single SnV centers. We find two classes of centers, emitting either at 620 nm (SnV-) or at 646.8 nm but not both. We demonstrate the active and reversible tuning of individual SnV- centers. However, unlike the NV centers, which we tune reversibly and continuously between NV- (638 nm), NV0 (575 nm), and NV+ (dark) states, the two kinds of SnV centers do not tune from one to the other. These findings indicate that the 646.8 nm line is likely owing to another Sn-related defect rather than to the neutral charge state of the split vacancy SnV defect along the āØ111ā© axis. Furthermore, p-i-p structures can be used efficiently to induce a tunable band bending, stabilize SnV- and NV- states, and explore the charge-state transition energies of many defect centers.