Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-12-01 |
| Journal | Journal of Semiconductors |
| Authors | Rui Zhou, Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He |
| Institutions | Hebei Semiconductor Research Institute, Xiāan Jiaotong University |
Abstract
Section titled āAbstractāAbstract In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I - V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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