Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-02-23 |
| Journal | Journal of Physics D Applied Physics |
| Authors | Cédric Masante, Nicolas Rouger, Julien Pernot |
| Institutions | Laboratoire Plasma et Conversion d’Energie, Institut Néel |
| Citations | 42 |
Abstract
Section titled “Abstract”Abstract Diamond has been explored to develop prototype field-effect transistors (FETs). At present, various architectures that are suited to high temperature and high-radiation environments are still under investigation for power electronics applications. Recently, the deep-depletion diamond metal-oxide-semiconductor FET (D3MOSFET) concept has been introduced and demonstrated to be a good candidate for designing efficient diamond MOSFETs. In this paper, a general introduction to the concept of deep depletion is given. The key issues concerning the design and fabrication of this kind of diamond MOSFET are then described and discussed in terms of quasi static performance (the ‘on’ and ‘off’ states). A demonstration of the working regimes of a fabricated normally-on D3MOSFET is described, which reached a critical field of at least 5.4 MV cm −1 at a drain-source bias of −175 V, without electric field relaxation structures. The minimum on-state resistance was measured and found to be R ON , S = 50 mΩ cm 2 at 250 ∘ C. Finally, the D3MOSFET is contextualized as part of a global research effort to develop diamond power FETs. Some of the main challenges regarding the fabrication of competitive D3MOSFETs and, more generally, diamond power devices are discussed.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2018 - Ultrawide-bandgap semiconductors: research opportunities and challenges [Crossref]
- 2017 - Deep depletion concept for diamond MOSFET [Crossref]
- 2017 - Deep-depletion mode boron-doped monocrystalline diamond metal oxide semiconductor field effect transistor [Crossref]
- 2017 - 200V, 4MV/cm lateral diamond MOSFET [Crossref]
- 2015 - Blocking characteristics of diamond junctions with a punch-through design [Crossref]
- 1975 - Nitrogen in diamond: evidence from thermal conductivity [Crossref]
- 2010 - Hall hole mobility in boron-doped homoepitaxial diamond [Crossref]
- 2006 - Hall electron mobility in diamond [Crossref]
- 2008 - Electron mobility in phosphorous doped 111 homoepitaxial diamond [Crossref]
- 2016 - N-type control of single-crystal diamond films by ultra-lightly phosphorus doping [Crossref]