Realization of highly conducting n-type diamond by phosphorus ion implantation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-03-08 |
| Journal | Applied Physics Letters |
| Authors | Dhruba Das, Asokan Kandasami, M. S. Ramachandra Rao |
| Institutions | Inter-University Accelerator Centre, Indian Institute of Technology Madras |
| Citations | 22 |
Abstract
Section titled āAbstractāWe report on the formation of n-type ultra-nanocrystalline diamond exhibiting high electrical conductivity, ĻRT ā¼104 Ī©ā1 mā1 by phosphorus ion implantation. The Raman study confirms the restoration of crystallinity upon high vacuum and high-temperature annealing post-implantation process at 850 Ā°C. Varying the fluence enabled us to obtain a reduced thermal activation energy of Ea ā¼8 meV with a very high carrier concentration of ne ā¼1021 cmā3. Hall measurements confirm the n-type nature in phosphorus-implanted diamond at a high fluence of 1016 ions/cm2, and the nonlinear Hall effect reveals the signature of two band conduction mechanism, one via the impurity band and the other through the conduction band.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2012 - Ultrananocrystalline Diamond: Synthesis, Properties and Applications