Performance-Improved Vertical Zr/Diamond Schottky Barrier Diode With Lanthanum Hexaboride Interfacial Layer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-07-26 |
| Journal | IEEE Electron Device Letters |
| Authors | Guoqing Shao, Juan Wang, Zhangcheng Liu, Yanfeng Wang, Wei Wang |
| Institutions | Xi’an Jiaotong University |
| Citations | 15 |
Abstract
Section titled “Abstract”We have demonstrated performance-improved vertical diamond Schottky barrier diode (SBD) by introducing a lanthanum hexaboride (LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> ) interfacial layer between Zr and diamond. The composition of LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> was characterized using X-ray photoelectron spectroscopy. The fabricated diamond SBD with LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> delivers a rectification ratio of 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>10</sup> , a Schottky barrier height (SBH) of 1.53 eV, a saturation current density of 1.82×10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-19</sup> A/cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> , and a shunt resistance of 2.67×10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>12</sup> Ω. These results indicate that with the inclusion of LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> , diamond SBD exhibits improved SBH and reverse breakdown capability. Additionally, the trap-limited space-charge-limited current (SCLC) remains the determinant transport mechanism for diamond SBD with LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> . Meanwhile, the interface states density is significantly reduced due to the effect of LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> . These results suggest the great potential of vertical Zr/LaB <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sub> /p-diamond SBD as future high-performance power rectifiers.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2007 - Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics [Crossref]