Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-10-05 |
| Authors | Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Eiji Higurashi |
| Institutions | National Institute of Advanced Industrial Science and Technology |
Abstract
Section titled “Abstract”A polycrystalline diamond substrate treated with a mixture of NH <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> and H <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.