GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-10-05 |
| Authors | Shuichi Hiza, Yusuke Shirayanagi, Yuki Takiguchi, Kohei Nishimura, Takashi Matsumae |
| Institutions | Kumamoto University, Mitsubishi Electric (Japan) |
| Citations | 1 |
Abstract
Section titled āAbstractāGaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.