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6CCVD Research

Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2021-02-01
JournalApplied Physics Letters
AuthorsMinghui Zhang, Wei Wang, Genqiang Chen, Haris Naeem Abbasi, Fang Lin
InstitutionsXi’an Jiaotong University
Citations19

Abstract

Section titled “Abstract”

This is the attempt to apply yttrium (Y) gate material to hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with a 10 nm Al2O3 dielectric layer. The maximum drain source current of Y/Al2O3/H-terminated diamond FET with a gate length of 8 μm is −53.9 mA/mm obtained at a gate voltage of −7 V and a drain source voltage of −20 V, and its current on-off ratio exceeds 109, which is large enough for practical applications. Based on the relationship between gate voltage and drain source current, the subthreshold swing is extracted to be 198 mV/dec. The electrical performance reveals that Y/Al2O3/H-terminated diamond FET would pave the way for the development of H-terminated diamond FET.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2002 - High carrier mobility in single-crystal plasma deposited diamond [Crossref]
  2. 2007 - Surface-conducting diamond [Crossref]
  3. 2004 - Superconductivity in diamond [Crossref]
  4. 2018 - Efficient and tunable photoinduced honeycomb lattice in an atomic ensemble [Crossref]
  5. 1996 - Hydrogen-terminated diamond surfaces and interfaces [Crossref]
  6. 2001 - Hydrogen-induced transport properties of holes in diamond surface layers [Crossref]
  7. **** - Diamond based field-effect transistors of Zr gate with SiNx dielectric layers [Crossref]
  8. 2019 - 3.8 W/mm power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity [Crossref]
  9. 2016 - High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors [Crossref]
  10. 2017 - Diamond field effect transistors with MoO3 gate dielectric [Crossref]

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