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Applicability of gas-jet MPCVD polycrystalline diamond films on silicon with NV centers in quantum magnetometry

MetadataDetails
Publication Date2021-12-01
JournalJournal of Physics Conference Series
AuthorsSergey Tarkov, V. A. Antonov, Sergey N. Podlesny, A A Yemelyanov, А. К. Ребров
InstitutionsNikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences
Citations4

Abstract Polycrystalline diamond film optical and electrical properties are investigated after the growth on <001> and <111> Si substrate by gas-jet MPCVD deposition in the presence of nitrogen in the gas mixture. Negatively charged NV āˆ’ center formation was observed at the ~1.0 ppm level with the substitutional nitrogen concentration of 70 ppm. A comparison with the IIa type monocrystalline diamond plates with implanted and annealed nitrogen atoms at the 90 ppm concentration shows three times higher NV center formation efficiency by gas-jet MPCVD deposition than by ion implantation. CW optically detected magnetic resonance (ODMR) demonstrates the NV contented polycrystalline film application in a quantum magnetometry.