Reductions of implantation induced defects and leakage current by annealing in NH3/N2 atmosphere for Mg- and N-implanted GaN
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-01-21 |
| Journal | Applied Physics Express |
| Authors | Hiroko Iguchi, Keita Kataoka, Taishi Kimura, Daigo Kikuta |
| Institutions | Toyota Central Research and Development Laboratories (Japan) |
| Citations | 2 |
Abstract
Section titled āAbstractāAbstract We demonstrate the advantage of post-implantation annealing (PIA) in NH 3 /N 2 for a p-n diode (PND) fabricated by the implantation of Mg and N ions into an n-type GaN layer by comparison with that annealed in N 2 . The leakage current for the PND with a reverse bias was lower in the case of NH 3 /N 2 annealing. The cathodoluminescence spectrum measured for NH 3 /N 2 annealing indicated a reduction in the densities of non-radiative recombination centers and nitrogen vacancy complexes. PIA in NH 3 /N 2 is thus effective to suppress the density of implantation induced defects as leakage current sources.