Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-05-13 |
| Journal | Semiconductor Science and Technology |
| Authors | Khush Gohel, Linhui Zhou, Swarnav Mukhopadhyay, Shubhra S. Pasayat, Chirag Gupta |
| Institutions | University of WisconsināMadison |
| Citations | 3 |
Abstract
Section titled āAbstractāAbstract High-power operation of high electron mobility transistors (HEMTs) is limited due to a variety of thermal resistances in HEMT devices that cause self-heating effects (SHEs). To reduce SHEs, diamond heat spreaders integrated in the device have proven efficient in extracting heat from the device. In this report, we use electrothermal technology computer-aided design simulations to demonstrate a qualitative understanding of multiway heat extraction utilizing diamond heat spreaders to improve HEMT thermal performance at high DC output power densities (ā¼40 W mm ā1 ). The impact of each heat extraction pathway is understood while considering the thermal boundary resistance between the diamond/GaN heterointerface and optimization of the GaN buffer layer thickness. Using these findings, we simulate an AlGaN/GaN HEMT device operating at 40 W mm ā1 DC output power and demonstrate significant reduction in the temperature.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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