Noninvasive Lift-off Technology for Integration of GaN HEMTs with Diamond
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2022-03-06 |
| Journal | 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| Authors | Mei Wu, Xinchuang Zhang, Ling Yang, Xiaohua Ma, Yue Hao |
| Citations | 1 |
Abstract
Section titled âAbstractâThis paper proposes a noninvasive AlGaN/GaN epitaxial lift-off (ELO) method based on SOI substrate. The AlGaN/GaN epitaxial layer has been successfully released with the thin Si top layer, and a small surface roughness of 0.214 nm is obtained. Using this ELO method and wafer bonding technique, GaN-on-Si/Diamond HEMT has been fabricated and the 2DEG characteristics of the heterojunction is highly maintained after the transfer process. Besides, both electrical and thermal performance show great improvement after transfer onto diamond substrate, indicating that the proposed ELO process can be applied for the integration of GaN HEMTs with diamond successfully.