Space charge limited corrections to the power figure of merit for diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-05-30 |
| Journal | Applied Physics Letters |
| Authors | Harshad Surdi, T. J. Thornton, R. J. Nemanich, Stephen M. Goodnick |
| Institutions | Arizona State University |
| Citations | 6 |
Abstract
Section titled āAbstractāAn interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (RON,sp) derived from the space charge limited current-voltage relationship (Mott-Gurney square law). The limitations of the traditional Ohmic RON,sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott-Gurney based RON,sp is confirmed by Silvaco ATLAS drift-diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1999 - Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC [Crossref]
- 2019 - GaN Transistors for Efficient Power Conversion
- 2017 - High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 [Crossref]
- 2017 - Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV [Crossref]
- 2017 - Design of a normally-off diamond JFET for high power integrated applications [Crossref]
- 2014 - Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
- 1989 - Optimum semiconductors for high-power electronics [Crossref]
- 2005 - Space-charge-limited currents in GaN Schottky diodes [Crossref]
- 2020 - Probing metastable space-charge potentials in a wide band gap semiconductor [Crossref]
- 1994 - Space charge limited current in semiconducting diamond films [Crossref]