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6CCVD Research

High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-08-15
JournalApplied Physics Letters
AuthorsJ. CaƱas, Christian Dussarrat, Takashi Teramoto, CƩdric Masante, M. GutiƩrrez
InstitutionsTsukuba University of Technology, Centre National de la Recherche Scientifique
Citations6

Abstract

Section titled ā€œAbstractā€

Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-type (100) oriented diamond and SiO2 grown by atomic layer deposition. A detailed electrical characterization consisting of I-V, C-V, and C-F was performed in order to analyze the electrical properties of the structure. The MOS capacitor presented no detectable leakage current in forward and very low leakage current in reverse sustaining at least 6 MV/cm without degradation. The C-V measurements showed depletion and deep depletion regimes in forward and accumulation regimes in reverse, with a low density of interface states of āˆ¼1011 cmāˆ’2 along the diamond bandgap. The latter results were further validated by conductance and capacitance vs frequency measurements.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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