Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-12-31 |
| Journal | Functional Diamond |
| Authors | Minghui Zhang, Wei Wang, Feng Wen, Fang Lin, Genqiang Chen |
| Institutions | Hebei Semiconductor Research Institute, Xiāan Jiaotong University |
| Citations | 8 |
Abstract
Section titled āAbstractāInvestigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transconductance, on/off ratio, subthreshold swing, capacitance, carrier density, saturation carrier mobility, fixed charge density and interface state density are of ā37.3 mA/mm, 0.22 V, 6.42 mS/mm, 108, 134 mV/dec, 0.33 Ī¼F/cm2, 9.83 Ć 1012 cmā2, 97.9 cm2/VĀ·s, 7.63 Ć 1012 cmā2 and 2.56 Ć 1012 cmā2Ā·eVā1, respectively. This work is significant to the development of H-terminated diamond FET.