Color centers in AlN as qubit candidates - point defect management
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-03-15 |
| Authors | RamĆ³n Collazo, Pegah Bagheri, Ronny Kirste, Pramod Reddy, Seiji Mita |
| Institutions | North Carolina State University, Adroit Materials (United States) |
Abstract
Section titled āAbstractāAlN as an UWBG host for quantum emitters, especially color centers, is expected to address current challenges such as operation at room temperature and scalability of quantum-photonic devices for qubit applications. Significant challenges in the point defect management and existence of multiple defects charge states precludes the use of AlN as a simple practical host for qubits. In this work, a roadmap for the stabilization of Ti-related color centers in AlN for quantum computing applications is presented. The realization of (TiAlVN)0 defects as a candidate for single spin color center requires the control of the Fermi level of AlN via doping, a nitrogen vacancy supersaturation via implantation, and the use of CPC and dQFL control methods to suppress the formation of other defects. This work opens a pathway for the systematic management of color centers with particular charge states in nitrides for quantum computing applications.