Formation and characterization of Ti-Vacancy complex in AlN as a candidate for qubit
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-03-15 |
| Authors | Pegah Bagheri, Ronny Kirste, Pramod Reddy, Seiji Mita, RamĆ³n Collazo |
| Institutions | North Carolina State University, Adroit Materials (United States) |
Abstract
Section titled āAbstractāThere is an increasing demand in the realization of new color centers in ultrawide bandgap semiconductors with ability to operate at room temperature for the quantum computation. AlN with bandgap of 6.2 eV and availability of mature growth techniques and controllable doping seems to be a suitable host for many deep color centers as a candidate for qubit such as (Ti_Al-V_N)^0. However, stabilization of this defect configuration with certain charge state requires defect engineering in AlN. In this work, formation of Ti-V complex was enhanced by introducing nitrogen vacancy supersaturation through Ti implantation. Kinetics of Ti-Vacancy complex formation was studied by annealing the implanted samples at various temperatures. Furthermore, the structural and optical properties of these color centers were investigated via STEM and micro-PL measurement. This work opens up pathway for realization of any color centers in semiconductors as a candidate for qubit.