A membrane, pseudo-vertical p-i-n diamond detector
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-04-03 |
| Journal | Journal of Nuclear Science and Technology |
| Authors | T. Kishishita, Kimiyoshi Ichikawa, K. Tauchi, M. Shoji, M. Hagiwara |
| Institutions | High Energy Accelerator Research Organization, National Institute for Materials Science |
| Citations | 2 |
Abstract
Section titled āAbstractāWe report on the membrane diamond detector, which consists of 5 Āµm-thick p-i-n diodes and a dedicated front-end ASIC, fabricated in a 65-nm CMOS technology. The p-i-n diode has an attractive feature for low Ī³-ray sensitivities due to its extremely thin drift layer, which is difficult to form by etching of bulk diamond with a MetalāInsulatorāMetal structure. The pseudo-vertical p-i-n diode structure was formed on the single crystal diamond {111} substrate by MPCVD and dry-etching process. The readout electronics was designed to meet specifications for real-time neutron monitoring in harsh Ī³-ray environments. The prototype system was evaluated in charge distribution measurements induced by Ī±-particles from 241Am. The charge spectra were successfully obtained from multi-channels, each of which has a diameter of 250 Āµm aligning in a pixel matrix. By combining with neutron converters, e.g. 10B or 7Li, we expect the detector system as a good candidate for detecting spontaneous fission neutrons, emitted from submerged fuel debris at the Fukushima Daiichi Nuclear Power Plant in Japan.