Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-04-03 |
| Journal | Applied Physics Letters |
| Authors | Moriyoshi Haruyama, Yuki Okigawa, Mitsuhiro Okada, H. Nakajima, Toshiya Okazaki |
| Institutions | National Institute of Advanced Industrial Science and Technology |
| Citations | 9 |
Abstract
Section titled āAbstractāWe studied the charge-state stabilization of shallow nitrogen-vacancy (NV) centers in (111) diamond using graphene/diamond junctions. Measurement of the fluorescence stability and evaluation of the charge-state stability were conducted on the NV centers at the graphene and the graphene-free region. The results revealed that about half of the total NV centers (NV0 + NVā) at the graphene-free region were unstable, while over 90% of the measured NV centers at the graphene region were stabilized as NVā centers. Graphene/diamond junctions contribute significantly to charge-state stabilization of shallow NVā centers in (111) diamond.