$alpha$-Ga2O3/Diamond Heterojunction PN Diode - Device Fabrication and TCAD Modelling
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-06-25 |
| Authors | Cristian J. Herrera-Rodriguez, Atsushi Shimbori, T.A. Grotjohn |
| Institutions | Ford Motor Company (United States), Michigan State University |
Abstract
Section titled “Abstract”Diamond is one of the most promising semiconductor materials for high power applications because of its exceptional electronic and thermal properties. Diamond bipolar devices are promising for ultra-high voltage applications (>10kV), but diamond PN junctions have limitations due to (1) a high turn-on voltage (∼5V) giving a significant on-state voltage drop and (2) n-type diamond having higher resistivity and poor ohmic contacts. To address this problem, the implementation of an alternative n-type UWBG semiconductors with shallow donor dopants should be considered. <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\beta$</tex> -Gallium Oxide ( <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\beta$</tex> -Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> ) is a semiconductor that has gained significant attention due to its attractive properties like its wide bandgap (4.85eV), good n-type doping, and high breakdown field in the range of 8 MV/cm. Diamond’s outstanding thermal properties can serve as a heat dissipater at high power operations, which can compensate for the poor thermal conductivity of <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\beta$</tex> -Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> . This study formed p-type diamond and n-type Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> heterojunction diodes and measured their electrical characteristics. TCAD simulations of the pn junction were performed to further understand the current conduction.