Reproducible and High-Temperature Performance of NiO/ $beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV Breakdown
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-06-25 |
| Authors | Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, F. Ren |
| Institutions | University of Florida |
Abstract
Section titled “Abstract”The increasing electrification of automobiles and the need to switch renewable energy sources in the existing power grid has increased the demand for energy-efficient power electronics capable of higher voltage and currents than existing Si devices. This has focused attention on the wide and ultra-wide bandgap semiconductors, with the latter including diamond, AlN and Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> . The ability to grow large-diameter, high-quality crystals and the attendant low cost of production has spurred interest in <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\beta$</tex> -Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> . [1] The lack of p-type doping options for Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> has led to the use of p-type oxides to form p-n heterojunctions with the n-type Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> . The most successful has been NiO, deposited by sputtering.[2]-[4] Optimizing the heterojunction rectifier device structure is crucial to achieve a high-power figure of merit (FOM) for power electronic devices, defined as (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>B</inf> ) <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> /R <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>ON</inf> where V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>B</inf> is the reverse breakdown voltage and R <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>ON</inf> -is the on-state resistance. A less studied aspect has been the elevated temperature performance of such devices. We report an investigation of the uniformity of achieving high V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>B</inf> and low R <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>ON</inf> , as well as the temperature dependent performance of NiO/Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> vertical rectifiers. A new highest V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>B</inf> and highest-temperature voltage blocking capability for these devices are achieved.