Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-06-11 |
| Authors | Bo‐An Chen, Yi-Wen Lin, Hao‐Hsiang Chang, Chih‐Hsiang Chang, Ming-Yueh Huang |
| Institutions | Taiwan Semiconductor Manufacturing Company (Taiwan), National Tsing Hua University |
| Citations | 1 |
Abstract
Section titled “Abstract”We report the vertically stacked Ge diamond-shape nanowires (NWs) gate-all-around field-effect transistor (GAAFET) with ferroelectric (Fe) layer HZO <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$=2$</tex> nm <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$/\mathbf{Al}_{2}\mathbf{O}_{3}=4$</tex> nm. The in-situ ALD ozone treatment is applied to reduce the interface defect density (Dit). Furthermore, the transfer <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{I}_{\mathbf{D}}$</tex> 1 <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>D</inf> - V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>G</inf> curves of the device shows superior performance with a minimum steep sub-threshold slope <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$(\mathbf{SS}_{\text{MIN}})$</tex> of 49 <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{mV}/\mathbf{dec}$</tex> . The formation of the vertically stacked Ge diamond-shape NWs Fe-GAAFET could be compatible with current CMOS technology platform and have high potential for high-performance IC applications.