Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-10-23 |
| Journal | Applied Physics Letters |
| Authors | Jianing Su, Wei Wang, Guoqing Shao, Genqiang Chen, Hongxing Wang |
| Institutions | Xiāan Jiaotong University |
| Citations | 10 |
Abstract
Section titled āAbstractāA mobility-enhanced normally off hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with low interface state density has been realized using Al2O3/Nd gate stack deposited by electron beam evaporator. The threshold voltage is extracted to be ā1.48 V, indicating an obvious normally off characteristic. The enhancement mode could be ascribed to the large work function difference between Nd and H-diamond. The subthreshold swing is deduced as low as 86.3 mV/dec, revealing a high working speed in the subthreshold region. More importantly, the mobility (518.5 cm2/VĀ·s) has been enhanced due to the fairly low interface state density (3.19 Ć 1011 cmā2Ā·eVā1). In addition, the device exhibits a relatively low trapped charge density and fixed charge density from the C-V characteristic. This work provides a simple method to realize the normally off device and suggests the great potential of adopting the Al2O3/Nd gate stack for achieving high-performance H-diamond FET.