A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-12-20 |
| Journal | Journal of Association of Electrical and Electronics Engineers |
| Authors | Afshin Dadkhah, Arash Daghighi |
| Institutions | Shahrekord University |
| Citations | 1 |
Abstract
Section titled āAbstractāA Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET