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Analyzing k · p modeling in highly mismatched alloys and other III–V semiconductors

MetadataDetails
Publication Date2023-12-20
JournalJournal of Applied Physics
AuthorsM. Gładysiewicz, Marek S. Wartak
InstitutionsWrocław University of Science and Technology, AGH University of Krakow
Citations2

This Tutorial provides a comprehensive overview of various k⋅p models used to describe the electronic band structures of semiconductors with cubic diamond and zinc blende symmetries. Our primary focus is on III-V semiconductors, with a particular emphasis on highly mismatched alloys. We begin our exploration with the six-band k⋅p model, which effectively captures interactions within the highest valence bands. Following that, we delve into the intricacies of the eight-band k⋅p model, which takes into account strain effects and modifications to energy dispersion. The Tutorial also introduces the band anticrossing model and its corresponding ten-band k⋅p models, specifically tailored for dilute nitride semiconductors. Furthermore, we extend our discussion to the valence band anticrossing model and its application to the 14-band k⋅p model in the context of dilute bismide materials. Additionally, we emphasize the significance of more comprehensive models, exemplified by the 30-band k⋅p model, for faithfully representing the entire Brillouin zone.

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