Analyzing k · p modeling in highly mismatched alloys and other III–V semiconductors
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-12-20 |
| Journal | Journal of Applied Physics |
| Authors | M. Gładysiewicz, Marek S. Wartak |
| Institutions | Wrocław University of Science and Technology, AGH University of Krakow |
| Citations | 2 |
Abstract
Section titled “Abstract”This Tutorial provides a comprehensive overview of various k⋅p models used to describe the electronic band structures of semiconductors with cubic diamond and zinc blende symmetries. Our primary focus is on III-V semiconductors, with a particular emphasis on highly mismatched alloys. We begin our exploration with the six-band k⋅p model, which effectively captures interactions within the highest valence bands. Following that, we delve into the intricacies of the eight-band k⋅p model, which takes into account strain effects and modifications to energy dispersion. The Tutorial also introduces the band anticrossing model and its corresponding ten-band k⋅p models, specifically tailored for dilute nitride semiconductors. Furthermore, we extend our discussion to the valence band anticrossing model and its application to the 14-band k⋅p model in the context of dilute bismide materials. Additionally, we emphasize the significance of more comprehensive models, exemplified by the 30-band k⋅p model, for faithfully representing the entire Brillouin zone.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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