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6CCVD Research

Analysis of the Effects of Parameters on the Performance of Resonators Based on a ZnO/SiO2/Diamond Structure

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Section titled “At a Glance”
MetadataDetails
Publication Date2024-01-19
JournalApplied Sciences
AuthorsGang Cao, Hongliang Wang, Peng Zhang
InstitutionsNorth University of China
Citations1
AnalysisFull AI Review Included

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With the development of communications technology, surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices have become hotspots of the competitive research in the frequency band above GHz. It imposes higher requirements on the operating frequency, temperature coefficient of frequency (TCF), and electromechanical coupling coefficient (k2) of SAW devices. In this work, we reported on a novel ZnO/SiO2/diamond-layered resonator structure and systematically investigated its propagation characteristics by using finite element methods. A comparative study and analysis of k2 and acoustic velocity (vp) for both the excited Rayleigh mode and the Sezawa mode were conducted. By selecting the appropriate ZnO piezoelectric film, SiO2, and electrode thickness, the Sezawa mode was chosen as the main mode, effectively improving both k2 and vp. It was observed that the k2 of the Sezawa mode is 7.5 times that of the excited Rayleigh mode and nearly 5 times that of piezoelectric single-crystal ZnO; vp is 1.7 times that of the excited Rayleigh mode and nearly 1.5 times that of piezoelectric single-crystal ZnO. Furthermore, the proposed multilayer structure achieves a TCF close to 0 while maintaining a substantial k2. In practical applications, increasing the thickness of SiO2 can compensate for the device’s TCF reduction caused by the interdigital transducer (IDT). Finally, this study explored the impact of increasing the aperture width and IDT pairs on the performance of the single-port resonator, revealing the changing patterns of quality factor (Q) values. The results reported here show that the structure has great promise for the fabrication of high-frequency and low-TCF SAW devices.

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References

Section titled “References”
  1. 2015 - A Snapshot in Time: The Future in Filters for Cell Phones [Crossref]
  2. 2020 - Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators [Crossref]
  3. 2020 - Ultra-Large-Coupling and Spurious-Free SH 0 Plate Acoustic Wave Resonators Based on Thin LiNbO3 [Crossref]
  4. 2023 - Investigation on the Temperature Coefficient of Frequency Performance of LiNbO3 on Quartz and Glass Surface Acoustic Wave Resonators [Crossref]
  5. 2018 - Improved Resistance to Electromigration and Acoustomigration of Al Interdigital Transducers by Ni Underlayer [Crossref]
  6. 2018 - Three-Dimensional Finite Element Simulation of Love Mode Surface Acoustic Wave in Layered Structures Including ZnO Piezoelectric Film and Diamond Substrate [Crossref]
  7. 2000 - Modelling of SAW Filter Based on ZnO/Diamond/Si Layered Structure Including Velocity Dispersion [Crossref]
  8. 2021 - Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure [Crossref]

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