Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-05-01 |
| Journal | AIP Advances |
| Authors | Mohamed Torky, T. Paul Chow |
| Institutions | Rensselaer Polytechnic Institute |
| Citations | 2 |
Abstract
Section titled āAbstractāDesigning high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10Ć higher avalanche breakdown electric field. Nevertheless, because of the difference in the breakdown field profile and ionization path length, the effective breakdown field for these semiconductor SJ devices has not been determined theoretically. Consequently, we estimate and compare the effective critical breakdown electric field for SJ device structures in Si, 4H-SiC, 2H-GaN, Ī²-Ga2O3, diamond, and AlN using Technology Computer Aided Design TCAD simulation. We also establish its dependence on the SJ devicesā structural parameters, such as the pillar thickness. Furthermore, we also quantitatively compare the on-state performance of these SJ devices, including their thermal capabilities, using a paramount figure-of-merit to underscore the potential improvement possible.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2008 - Fundamentals of Power Semiconductor Devices