High-Sensitivity DTSs Based on Diamond With a Low Doping Drift Layer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-05-21 |
| Journal | IEEE Sensors Journal |
| Authors | Bo Liang, Benjian Liu, Saifei Fan, Chuanlong Li, Wenchao Zhang |
| Institutions | Harbin Institute of Technology |
| Citations | 13 |
Abstract
Section titled “Abstract”Temperature monitoring is considerably important during the operation of power devices. Herein, pseudo-vertical diamond Schottky diodes with a low doped drift layer were fabricated as diode temperature sensors. The current-voltage characteristics determined in the range of 298-664 K revealed an increase in the forward current with increasing temperature. The sensing ability of the as-fabricated sensors was evaluated by characterizing the temperature dependence of the forward voltage drop at certain currents. In this study, the highest sensitivity was obtained for a diode temperature sensor based on the wide-bandgap semiconductor. However, the obtained sensitivities exhibited different values in high and low temperature ranges for the currents of 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-5</sup> , 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-4</sup> and 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-3</sup> A. To explain the sectional sensitivities, theoretical models were proposed based on the thermionic emission model and Cheung’s model. The results indicated the presence of an inhomogeneous Schottky contact and a temperature-dependent series resistance, which explained the sectional and ultrahigh sensitivities.